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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB677 DESCRIPTION *High DC Current Gain: hFE = 2000(Min)@ IC= -1A *Collector-Emitter Breakdown Voltage: V(BR)CEO = -40V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A APPLICATIONS *Switching applications. *Hammer drive, pulse motor drive applications. *Power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w PARAMETER scs .i w VALUE -60 -40 -5 -3 25 UNIT .cn mi e V V VEBO Emitter-Base Voltage V IC Collector Current-Continuous Collector Power Dissipation TC=25 Junction Temperature A PC W Tj 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB677 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, IB= 0 -40 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A, IB= -4mA B -1.5 V VBE(sat)) ICBO IEBO Base-Emitter Saturation Voltage IC= -2A, IB= -4mA B -2.0 V A Collector Cutoff Current VCB= -60V, IE= 0 VEB= -5V; IC= 0 -20 Emitter Cutoff Current -2.5 mA hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain ton tstg tf Turn-on Time Storage Time Fall Time w w scs .i w IC= -3A; VCE= -2V .cn mi e 2000 1000 0.30 s s s VCC= -30V; IB1= -IB2= -6mA, RL= 10 0.60 0.25 isc Websitewww.iscsemi.cn |
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